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| BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 Symbol VCEO Value --65 --45 --30 --80 --50 --30 --5.0 --100 Unit V 1 2 SC-70/SOT-323 CASE 419 STYLE 3 MARKING DIAGRAM Collector-Base Voltage VCBO V xx M G G V mAdc 1 xx = Specific Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Emitter--Base Voltage Collector Current -- Continuous VEBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-- 5 Board, (Note 1) TA = 25C Thermal Resistance, Junction--to--Ambient Junction and Storage Temperature Symbol PD RJA TJ, Tstg Max 150 883 -- 55 to +150 Unit mW C/W ORDERING INFORMATION C See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR--5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 2 - 1 Publication Order Number: BC856BWT1/D BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -- Emitter Breakdown Voltage (IC = --10 mA) Collector -- Emitter Breakdown Voltage (IC = --10 mA, VEB = 0) Collector -- Base Breakdown Voltage (IC = --10 mA) Emitter -- Base Breakdown Voltage (IE = --1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857B Only BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO --65 --45 --30 --80 --50 --30 --80 --50 --30 --5.0 --5.0 --5.0 ------------------------------15 --4.0 V Symbol Min Typ Max Unit V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = --30 V) Collector Cutoff Current (VCB = --30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = --10 mA, VCE = --5.0 V) (IC = --2.0 mA, VCE = --5.0 V) BC856A, BC585A BC856B, BC857B, BC858B BC857C BC856A, BC858A BC856B, BC857B, BC858B BC857C ICBO nA mA hFE ---125 220 420 90 150 270 180 290 520 ----0.7 --0.9 --- ---250 475 800 -- Collector -- Emitter Saturation Voltage (IC = --10 mA, IB = --0.5 mA) (IC = --100 mA, IB = --5.0 mA) Base -- Emitter Saturation Voltage (IC = --10 mA, IB = --0.5 mA) (IC = --100 mA, IB = --5.0 mA) Base -- Emitter On Voltage (IC = --2.0 mA, VCE = --5.0 V) (IC = --10 mA, VCE = --5.0 V) SMALL- SIGNAL CHARACTERISTICS Current -- Gain -- Bandwidth Product (IC = --10 mA, VCE = --5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = --10 V, f = 1.0 MHz) Noise Figure (IC = --0.2 mA, VCE = --5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) VCE(sat) V ------0.6 ---0.3 --0.65 V --V --0.75 --0.82 VBE(sat) VBE(on) fT Cob NF 100 --- ---- -4.5 10 MHz pF dB http://onsemi.com 2 BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series BC857/BC858 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = --10 V TA = 25C V, VOLTAGE (VOLTS) --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0.2 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 0 --0.1 --0.2 VCE(sat) @ IC/IB = 10 --0.5 --1.0 --2.0 --5.0 --10 --20 IC, COLLECTOR CURRENT (mAdc) --50 --100 VBE(on) @ VCE = --10 V TA = 25C VBE(sat) @ IC/IB = 10 0.3 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain --2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR--EMITTER VOLTAGE (V) TA = 25C --1.6 --1.2 --0.8 --0.4 0 IC = --10 mA IC = --20 mA IC = --50 mA IC = --200 mA IC = --100 mA 1.0 Figure 2. "Saturation" and "On" Voltages --55C to +125C 1.2 1.6 2.0 2.4 2.8 --0.02 --1.0 --0.1 IB, BASE CURRENT (mA) --10 --20 --0.2 --10 --1.0 IC, COLLECTOR CURRENT (mA) --100 Figure 3. Collector Saturation Region 10 7.0 C, CAPACITANCE (pF) 5.0 3.0 2.0 Cob Cib TA = 25C f T, CURRENT--GAIN -- BANDWIDTH PRODUCT (MHz) 400 300 200 150 100 80 60 40 30 Figure 4. Base-Emitter Temperature Coefficient VCE = --10 V TA = 25C 1.0 --0.4 --0.6 --1.0 --2.0 --4.0 --6.0 --10 --20 --30 --40 20 --0.5 --1.0 --2.0 --3.0 --5.0 --10 --20 --30 --50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product - http://onsemi.com 3 BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series BC856 --1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = --5.0 V TA = 25C 2.0 1.0 0.5 0.2 --0.1 --0.2 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25C --0.8 VBE(sat) @ IC/IB = 10 --0.6 --0.4 --0.2 VCE(sat) @ IC/IB = 10 0 --0.2 --0.5 --1.0 --50 --2.0 --5.0 --10 --20 IC, COLLECTOR CURRENT (mA) --100 --200 VBE @ VCE = --5.0 V Figure 7. DC Current Gain --2.0 --1.6 --1.2 --0.8 --0.4 TJ = 25C 0 --0.02 --0.05 --0.1 --0.2 --0.5 --1.0 --2.0 IB, BASE CURRENT (mA) --5.0 --10 --20 IC = --10 mA --20 mA --50 mA --100 mA --200 mA --1.0 --1.4 --1.8 --2.2 --2.6 --3.0 Figure 8. "On" Voltage VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS) VB, TEMPERATURE COEFFICIENT (mV/ C) VB for VBE --55C to 125C --0.2 --0.5 --1.0 --50 --5.0 --10 --20 --2.0 IC, COLLECTOR CURRENT (mA) --100 --200 Figure 9. Collector Saturation Region 40 TJ = 25C Cib Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT--GAIN -- BANDWIDTH PRODUCT 500 200 100 50 20 VCE = --5.0 V C, CAPACITANCE (pF) 20 10 8.0 6.0 4.0 2.0 --0.1 --0.2 Cob --0.5 --5.0 --10 --20 --1.0 --2.0 VR, REVERSE VOLTAGE (VOLTS) --50 --100 --100 --1.0 --10 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product - http://onsemi.com 4 BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) -- TC = P(pk) RJC(t) 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) Figure 13. Thermal Response --200 1s IC, COLLECTOR CURRENT (mA) --100 --50 TA = 25C TJ = 25C 3 ms --10 --5.0 --2.0 --1.0 BC858 BC857 BC856 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT --5.0 --10 --30 --45 --65 --100 VCE, COLLECTOR--EMITTER VOLTAGE (V) The safe operating area curves indicate IC- CE lim-V its of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. Figure 14. Active Region Safe Operating Area ORDERING INFORMATION Device BC856BWT1G BC857BWT1G BC857CWT1G BC858AWT1G BC858BWT1G Marking 3B 3F 3G 3J 3K Package SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) Shipping 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419--04 ISSUE N D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 BC856BWT1/D |
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